2Amp Ultra Fast Recovery Silicon Rectifier Diode Glass passivated
50-600V ES2A-ES2J SMB DO-214AA
FEATURES
● Glass passivated chip junctions
● Ideal for automated placement
● Ultrafast reverse recovery time
for high efficiency
● Low profile package
● High forward surge capability
● High temperature soldering:
260℃/10 seconds at terminals
● Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
● Case: JEDEC DO-214AA molded plastic
body over passivated chip
● Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
● Polarity: Laser band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| Parameter | Symbol | ES2A | ES2B | ES2C | ES2D | ES2E | ES2G | ES2J | UNITS |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
| Maximum RMS bridge input Voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | 420 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 600 | V |
Maximum instantaneous forward voltage drop per leg at 2.0A | VF | 0.95 | 1.25 | 1.70 | V |
Maximum DC reverse current at rated TA =25 C DC blocking voltage per element TA =100 C | IR | 5.0 500 | μA |
Maximum average forward rectified output current at TA=40 C | IF(AV) | 2.0 | A |
Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) | IFSM | 50 | A |
| Typical thermal resistance per element (1) | ReJA | 25 | ℃/W |
Operating junction and storage temperature range | TJ, TSTG | -55--150 | ℃ |
Size:
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